標題: High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
作者: Hung, B. F.
Wu, C. H.
Chin, Albert
Wang, S. J.
Yen, F. Y.
Hou, Y. T.
Jin, Y.
Tao, H. J.
Chen, Shih C.
Liang, Mong-Song
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: full silicidation (FUSI);HfSiON;IrxSi
公開日期: 1-Feb-2007
摘要: A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.
URI: http://dx.doi.org/10.1109/TED.2006.888626
http://hdl.handle.net/11536/11156
ISSN: 0018-9383
DOI: 10.1109/TED.2006.888626
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 54
Issue: 2
起始頁: 257
結束頁: 261
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