標題: | High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs |
作者: | Hung, B. F. Wu, C. H. Chin, Albert Wang, S. J. Yen, F. Y. Hou, Y. T. Jin, Y. Tao, H. J. Chen, Shih C. Liang, Mong-Song 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | full silicidation (FUSI);HfSiON;IrxSi |
公開日期: | 1-Feb-2007 |
摘要: | A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface. |
URI: | http://dx.doi.org/10.1109/TED.2006.888626 http://hdl.handle.net/11536/11156 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2006.888626 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 54 |
Issue: | 2 |
起始頁: | 257 |
結束頁: | 261 |
Appears in Collections: | Articles |
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