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dc.contributor.authorHung, B. F.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorWang, S. J.en_US
dc.contributor.authorYen, F. Y.en_US
dc.contributor.authorHou, Y. T.en_US
dc.contributor.authorJin, Y.en_US
dc.contributor.authorTao, H. J.en_US
dc.contributor.authorChen, Shih C.en_US
dc.contributor.authorLiang, Mong-Songen_US
dc.date.accessioned2014-12-08T15:14:46Z-
dc.date.available2014-12-08T15:14:46Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2006.888626en_US
dc.identifier.urihttp://hdl.handle.net/11536/11156-
dc.description.abstractA novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.en_US
dc.language.isoen_USen_US
dc.subjectfull silicidation (FUSI)en_US
dc.subjectHfSiONen_US
dc.subjectIrxSien_US
dc.titleHigh-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2006.888626en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume54en_US
dc.citation.issue2en_US
dc.citation.spage257en_US
dc.citation.epage261en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243888100011-
dc.citation.woscount8-
Appears in Collections:Articles


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