Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hung, B. F. | en_US |
dc.contributor.author | Wu, C. H. | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Wang, S. J. | en_US |
dc.contributor.author | Yen, F. Y. | en_US |
dc.contributor.author | Hou, Y. T. | en_US |
dc.contributor.author | Jin, Y. | en_US |
dc.contributor.author | Tao, H. J. | en_US |
dc.contributor.author | Chen, Shih C. | en_US |
dc.contributor.author | Liang, Mong-Song | en_US |
dc.date.accessioned | 2014-12-08T15:14:46Z | - |
dc.date.available | 2014-12-08T15:14:46Z | - |
dc.date.issued | 2007-02-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2006.888626 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11156 | - |
dc.description.abstract | A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | full silicidation (FUSI) | en_US |
dc.subject | HfSiON | en_US |
dc.subject | IrxSi | en_US |
dc.title | High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2006.888626 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 54 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 257 | en_US |
dc.citation.epage | 261 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000243888100011 | - |
dc.citation.woscount | 8 | - |
Appears in Collections: | Articles |
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