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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
2008Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Kei, Chi-Chung; Liu, Da-Ren; Hsiao, Chien-Nan; Yang, Chun-Hui; Changa, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2014Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBEChen, Wei-Chun; Wu, Yue-Han; Peng, Chun-Yen; Hsiao, Chien-Nan; Chang, Li; 材料科學與工程學系; Department of Materials Science and Engineering
1-四月-2008Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrateCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Yang, Chun-Hui; Chang, Ching-Chih; Chang, Chun-Yen; Kei, Chi-Chung; Hsiao, Chien-Nan; Perng, Tsong-Pyng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2009Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical SimulationsCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Ling, Yu-Ting; Chang, Ruey-Dar; Kei, Chi-Chung; Hsiao, Chien-Nan; Liu, Jun-Cheng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substratesCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Chang, Ching-Chih; Kei, Chi-Chung; Yang, Chun-Hui; Hsiao, Chien-Nan; Perng, Tsong-Pyng; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2013Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High I-ON/I-OFF Ratio Ge FinFETsChung, Cheng-Ting; Chen, Che-Wei; Lin, Jyun-Chih; Wu, Che-Chen; Chien, Chao-Hsin; Luo, Guang-Li; Kei, Chi-Chung; Hsiao, Chien-Nan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/DrainHan, Tsung-Yu; Luo, Guang-Li; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Kei, Chi-Chung; Hsiao, Chien-Nan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitorCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Liu, Jun-Cheng; Chen, Yi-Cheng; Chang, Yao-Feng; Wang, Shin-Yuan; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2011Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBELai, Fang-I; Kuo, Shou-Yi; Chen, Wei-Chun; Lin, Woei-Tyng; Wang, Wei-Lin; Chang, Li; Hsiao, Chien-Nan; Chiang, Chung-Hao; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2007Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrodeCheng, Chun-Hu; Chiang, Kuo-Cheng; Pan, Han-Chang; Hsiao, Chien-Nan; Chou, Chang-Pin; Mcalister, Sean P.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate DielectricCheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015The study of compensative structure assisted convex and concave corner structures etching by Inductively Coupled Plasma-Reactive Ion Etch (ICP-RIE)Lin, Yu-Hsin; Cheng, Yuan-Chieh; Chu, Nien-Nan; Hsu, Wensyang; Tang, Yu-Hsiang; Chen, Po-Li; Yang, Chih-Chung; Hsiao, Ming-Hua; Hsiao, Chien-Nan; 機械工程學系; Department of Mechanical Engineering
顯示 1 到 13 筆資料，總共 13 筆