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公開日期標題作者
27-十月-20051.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injectionPeng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC; 光電工程學系; Department of Photonics
1-一月-20061.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBEYu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S; 光電工程學系; Department of Photonics
1-七月-2005Characterization of electron emission from relaxed InAs quantum dots capped with InGaAsChen, JF; Hsiao, RS; Wang, CK; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
15-四月-2005Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopyChang, KP; Yang, SL; Chuu, DS; Hsiao, RS; Chen, JF; Wei, L; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-十二月-2005Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasersWang, JS; Lin, G; Hsiao, RS; Yang, CS; Lai, CM; Liang, CY; Liu, HY; Chen, TT; Chen, YF; Chi, JY; Chen, JF; 電子物理學系; Department of Electrophysics
15-六月-2006Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wellsChen, JF; Hsiao, RS; Hsieh, PC; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-一月-2006Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dotsChen, JF; Hsiao, RS; Hsieh, MF; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-九月-2005Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dotsChen, JF; Hsiao, RS; Chen, YC; Chen, YP; Hsieh, MT; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
15-一月-2006Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation timeChen, JF; Hsiao, RS; Hung, WK; Wang, JS; Chi, JY; Yu, HC; Su, YK; 電子物理學系; Department of Electrophysics
15-二月-2004High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxyWang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY; 電子物理學系; Department of Electrophysics
1-五月-2005High-performance 30-period quantum-dot infrared photodetectorChou, ST; Lin, SY; Hsiao, RS; Chi, JY; Wang, JS; Wu, MC; Chen, JF; 電子物理學系; Department of Electrophysics
1-十一月-2004Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu mWang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM; 電子物理學系; Department of Electrophysics
1-十二月-2005N incorporation into InGaAs cap layer in InAs self-assembled quantum dotsChen, JF; Hsiao, RS; Hsieh, PC; Chen, YJ; Chen, YP; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
15-九月-2004Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealingChen, JF; Hsiao, RS; Shih, SH; Wang, PY; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-十二月-2004Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxyHsiao, RS; Wang, JS; Lin, KF; Wei, L; Liu, HY; Liang, CY; Lai, CM; Kovsh, AR; Maleev, NA; Chi, JY; Chen, JF; 電子物理學系; Department of Electrophysics
1-三月-2006Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dBChang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC; 光電工程學系; Department of Photonics
29-九月-2005Singlemode InAs quantum dot photonic crystal VCSELsYang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY; 光電工程學系; Department of Photonics
3-十月-2005Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profilingChen, JF; Hsiao, RS; Chen, YP; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
15-五月-2006Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxyLai, FI; Kuo, SY; Wang, JS; Hsiao, RS; Kuo, HC; Chi, J; Wang, SC; Wang, HS; Liang, CT; Chen, YF; 光電工程學系; Department of Photonics
1-十月-2005Thickness dependence of current conduction and carrier distribution of GaAsN grown on GaAsChen, JF; Hsiao, RS; Hsieh, MT; Huang, WD; Guo, PS; Lee, WI; Lee, SC; Lee, CL; 電子物理學系; Department of Electrophysics
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