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顯示 1 到 7 筆資料，總共 7 筆
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1-五月-2009Distinguishing Between STI Stress and Delta Width in Gate Direct Tunneling Current of Narrow n-MOSFETsHsieh, Chen-Yu; Lin, Yi-Tang; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2008Electrical measurement of local stress and lateral diffusion near Source/Drain extension corner of uniaxially stressed n-MOSFETsHsieh, Chen-Yu; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2009Enhanced Hole Gate Direct Tunneling Current in Process-Induced Uniaxial Compressive Stress p-MOSFETsHsu, Chih-Yu; Lee, Chien-Chih; Lin, Yi-Tang; Hsieh, Chen-Yu; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2007Measurement of channel stress using gate direct tunneling current in uniaxially stressed nMOSFETsHsieh, Chen-Yu; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2007Temperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theoryChen, Ming-Jer; Yan, Shih-Guei; Chen, Rong-Ting; Hsieh, Chen-Yu; Huang, Pin-Wei; Chen, Han-Ping; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010意見探勘在中文評鑑語料之應用謝鎮宇; Hsieh, Chen-Yu; 梁婷; Liang, Tyne; 資訊學院資訊學程
2008應變金氧半場效電晶體機械應力萃取與其相關物理模型建立之研究謝振宇; Hsieh, Chen-Yu; 陳明哲; Chen, Ming-Jer; 電子研究所
顯示 1 到 7 筆資料，總共 7 筆