1. 目前位置：

瀏覽 的方式： 作者 Hsieh, IJ

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
1-一月-1996Characterization and fabrication of chimney-shaped metal field emittersCheng, HC; Wang, CC; Ku, TK; Hsieh, IJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Cu contamination effect in oxynitride gate dielectricsLin, YH; Pan, FM; Liao, YC; Chen, YC; Hsieh, IJ; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-1996Enhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arraysKu, TK; Chen, SH; Yang, CD; She, NJ; Tarntair, FG; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-1996Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arraysKu, TK; Chen, SH; Yang, CD; She, NJ; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC; 交大名義發表; National Chiao Tung University
1-十二月-1995Fabrication and characterization of diamond-clad silicon field emitter arraysCheng, HC; Ku, TK; Hsieh, BB; Chen, SH; Leu, SY; Wang, CC; Chen, CF; Hsieh, IJ; Huang, JCM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1995Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu mKu, TK; Hsieh, BB; Chen, MS; Wang, CC; Wang, PW; Hsieh, IJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995Fabrication and characterization of the Pd-silicided emitters for field-emission devicesWang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Fabrication and characterization of the Pd-silicided emitters for field-emission devicesWang, CC; Ku, TK; Hsieh, IJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Fabrication and characterization of the Pd-silicided emitters for field-emission devicesWang, CC; Ku, TK; Hsieh, IJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.Ku, TK; Chen, SH; Yang, CD; She, NJ; Tarntair, FG; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-五月-1998Growth of MgWO4 phosphor by RF magnetron sputteringChu, JP; Hsieh, IJ; Chen, JT; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2005Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retentionChin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC; 電機學院; College of Electrical and Computer Engineering
1-四月-2001The strong degradation of 30 angstrom gate oxide integrity contaminated by copperLin, YH; Chen, YC; Chan, KT; Pan, FM; Hsieh, IJ; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆