國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Hsieh, Shang-Hsun

顯示 1 到 8 筆資料，總共 8 筆

公開日期	標題	作者
1-三月-2015	Criteria for Plasmon-Enhanced Electron Drag in Si Metal-Oxide-Semiconductor Devices	Chen, Ming-Jer; Hsieh, Shang-Hsun; Liao, Yu-Chiao; Chen, Chuan-Li; Tsai, Ming-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2017	A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers	Hsieh, Shang-Hsun; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016	A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipoles in HKMG MOSFETs	Hsieh, Shang-Hsun; Hung, Jo-Chun; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2015	Plasmon-enhanced phonon and ionized impurity scattering in doped silicon	Chen, Ming-Jer; Hsieh, Shang-Hsun; Chen, Chuan-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2014	Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon	Chen, Ming-Jer; Chen, Chuan-Li; Hsieh, Shang-Hsun; Chang, Li-Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012	Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide (similar to 1 nm) nMOSFETs and Its TEM Evidence	Chen, Ming-Jer; Chang, Li-Ming; Kuang, Shin-Jiun; Lee, Chih-Wei; Hsieh, Shang-Hsun; Wang, Chi-An; Chang, Sou-Chi; Lee, Chien-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016	Two Competing Limiters in MOSFETs Scaling: Neutral Defects and S/D Plasmons	Hsieh, Shang-Hsun; Hung, Jo-Chun; Weng, Heng-Jui; Tsai, Ming-Fu; Chiang, Chih-Chi; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016	高介電金屬閘極短通道場效電晶體之長距庫倫效應、電中性缺陷散射及遠程偶極散射	謝尚勳; 陳明哲; Hsieh, Shang-Hsun; Chen, Ming-Jer; 電子研究所

顯示 1 到 8 筆資料，總共 8 筆