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1-三月-2009Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si(1.33)Ge(0.67)O(2) and Si(2.67)Ge(1.33)N(2) LayersChen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2009Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 LayersChen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-九月-2007Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory applicationChen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Sze, Simon M.; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2007Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory applicationChen, Wei-Ren; Chang, Ting-Chang; Liu, Po-Tsun; Tu, Chun-Hao; Yeh, Jui-Lung; Hsieh, Yen-Ting; Wang, Ren-You; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
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