標題: Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
作者: Chen, Wei-Ren
Chang, Ting-Chang
Hsieh, Yen-Ting
Sze, Simon M.
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 3-九月-2007
摘要: The authors proposed a formation mechanism of Ge nanocrystals embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory application in this study. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high pressure H-2 treatment or steam process. In this research, the preannealing capping oxide step is a critical process for nonvolatile memory effect. Transmission electron microscope shows the shape and density of nanocrystals in the dielectric. Moreover, the memory structure with Ge nanocrystal embedded in SiNx has better charge storage ability and data retention than Ge nanocrystal embedded in SiOx. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2779931
http://hdl.handle.net/11536/10342
ISSN: 0003-6951
DOI: 10.1063/1.2779931
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 10
結束頁: 
顯示於類別:期刊論文


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