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公開日期標題作者
1-一月-2000Improved immunity to plasma damage in ultrathin nitrided oxidesChen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1999Oxide thickness dependence of plasma charging damageLin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Plasma-induced charging damage in ultrathin (3-nm) gate oxidesChen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1997The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxidesChien, CH; Chang, CY; Lin, HC; Chang, TF; Hsien, SK; Tseng, HC; Chiou, SG; Huang, TY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
1-五月-1997The role of resist for ultrathin gate oxide degradation during O-2 plasma ashingChien, CH; Chang, CY; Lin, HC; Chiou, SG; Huang, TY; Chang, TF; Hsien, SK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997The role of resist for ultrathin gate oxide degradation during O-2 plasma ashingChien, CH; Chang, CY; Lin, HC; Chiou, SG; Huang, TY; Chang, TF; Hsien, SK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆