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顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
25-十一月-2014Electrical characteristic fluctuation of 16-nm-gate high-kappa/metal gate bulk FinFET devices in the presence of random interface trapsHsu, Sheng-Chia; Li, Yiming; 傳播研究所; 電機資訊學士班; Institute of Communication Studies; Undergraduate Honors Program of Electrical Engineering and Computer Science
2013Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS DevicesChen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan; 電機工程學系; Department of Electrical and Computer Engineering
1-九月-2013The intrinsic parameter fluctuation on high-kappa/metal gate bulk FinFET devicesLi, Yiming; Su, Hsin-Wen; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; 資訊工程學系; Department of Computer Science
1-九月-2013Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devicesChen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan; 資訊工程學系; Department of Computer Science
1-一月-2013On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation EffectChen, Chieh-Yang; Li, Yiming; Chen, Yu-Yu; Chang, Han-Tung; Hsu, Sheng-Chia; Huang, Wen-Tsung; Yang, Chin-Min; Chen, Li-Wen; 資訊工程學系; Department of Computer Science
1-一月-2013Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETsChen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming; 資訊工程學系; Department of Computer Science
2015本質參數擾動對於低操作電壓塊材鰭式場效應電晶體元件特性與電路功率消耗變異之研究許勝嘉; Hsu, Sheng-Chia; 李義明; Li, Yiming; 電信工程研究所
顯示 1 到 7 筆資料，總共 7 筆