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公開日期標題作者
18-五月-2017Band Alignment of 2D Transition Metal Dichalcogenide HeterojunctionsChiu, Ming-Hui; Tseng, Wei-Hsuan; Tang, Hao-Ling; Chang, Yung-Huang; Chen, Chang-Hsiao; Hsu, Wei-Ting; Chang, Wen-Hao; Wu, Chih-I; Li, Lain-Jong; 電子物理學系; Department of Electrophysics
29-四月-2013Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layerLiao, Yu-An; Hsu, Wei-Ting; Huang, Shih-Han; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
9-七月-2014Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer AlloySu, Sheng-Han; Hsu, Yu-Te; Chang, Yung-Huang; Chiu, Ming-Hui; Hsu, Chang-Lung; Hsu, Wei-Ting; Chang, Wen-Hao; He, Jr-Hau; Li, Lain-Jong; 電子物理學系; Department of Electrophysics
1-二月-2015Bandgap tunability at single-layer molybdenum disulphide grain boundariesHuang, Yu Li; Chen, Yifeng; Zhang, Wenjing; Quek, Su Ying; Chen, Chang-Hsiao; Li, Lain-Jong; Hsu, Wei-Ting; Chang, Wen-Hao; Zheng, Yu Jie; Chen, Wei; Wee, Andrew T. S.; 電機學院; College of Electrical and Computer Engineering
21-七月-2008Carrier dynamics of type-II InAs/GaAs quantum dots covered by a thin GaAs(1-x)Sb(x) layerChang, Wen-Hao; Liao, Yu-An; Hsu, Wei-Ting; Lee, Ming-Chih; Chiu, Pei-Chin; Chyi, Jen-Inn; 電子物理學系; Department of Electrophysics
29-九月-2014Determination of s-d exchange coupling in GaMnN by time-resolved Kerr rotation spectroscopyHsu, Wei-Ting; Hsieh, Ting-Yen; Chen, Hsin-Feng; Huang, Feng-Wen; Chen, Po-Cheng; Sheu, Jinn-Kong; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
1-四月-2019Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2Hsu, Wei-Ting; Quan, Jiamin; Wang, Chun-Yuan; Lu, Li-Syuan; Campbell, Marshall; Chang, Wen-Hao; Li, Lain-Jong; Li, Xiaoqin; Shih, Chih-Kang; 電子物理學系; Department of Electrophysics
15-八月-2011Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dotsHsu, Wei-Ting; Liao, Yu-An; Hsu, Feng-Chang; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
2-二月-2009Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dotsLiao, Yu-An; Hsu, Wei-Ting; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
13-十月-2017Evidence of indirect gap in monolayer WSe2Hsu, Wei-Ting; Lu, Li-Syuan; Wang, Dean; Huang, Jing-Kai; Li, Ming-Yang; Chang, Tay-Rong; Chou, Yi-Chia; Juang, Zhen-Yu; Jeng, Horng-Tay; Li, Lain-Jong; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
2014Fast Visible-Light Phototransistor Using CVD-Synthesized Large-Area Bilayer WSe2Liu, Pang-Shiuan; Chen, Chang-Hsiao; Hsu, Wei-Ting; Lin, Chih-Pin; Lin, Tzu-Ping; Chi, Li-Jen; Chang, Chao-Yuan; Wu, Shih-Chieh; Chang, Wen-Hao; Li, Lain-Jong; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-十二月-2019Influences of Contact Metals on the Performances of MoS2 Devices under StrainsTseng, Sian-Hong; Chen, Hung-Yi; Hsu, Wei-Ting; Wang, Hsiang-Chen; Li, Yuan-Yao; Chang, Wen-Hao; Lu, Ming-Pei; Lu, Ming-Yen; 電子物理學系; Department of Electrophysics
1-三月-2015Layered MoS2 grown on c-sapphire by pulsed laser depositionHo, Yen-Teng; Ma, Chun-Hao; Luong, Tien-Tung; Wei, Lin-Lung; Yen, Tzu-Chun; Hsu, Wei-Ting; Chang, Wen-Hao; Chu, Yung-Ching; Tu, Yung-Yi; Pande, Krishna Prasad; Chang, Edward Yi; 材料科學與工程學系; 電子物理學系; 電機資訊學士班; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electrophysics; Undergraduate Honors Program of Electrical Engineering and Computer Science; Department of Electronics Engineering and Institute of Electronics
1-一月-1970Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenidesAljarb, Areej; Fu, Jui-Han; Hsu, Chih-Chan; Chuu, Chih-Piao; Wan, Yi; Hakami, Mariam; Naphade, Dipti R.; Yengel, Emre; Lee, Chien-Ju; Brems, Steven; Chen, Tse-An; Li, Ming-Yang; Bae, Sang-Hoon; Hsu, Wei-Ting; Cao, Zhen; Albaridy, Rehab; Lopatin, Sergei; Chang, Wen-Hao; Anthopoulos, Thomas D.; Kim, Jeehwan; Li, Lain-Jong; Tung, Vincent; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-八月-2014Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast PhotodetectionChang, Yung-Huang; Zhang, Wenjing; Zhu, Yihan; Han, Yu; Pu, Jiang; Chang, Jan-Kai; Hsu, Wei-Ting; Huang, Jing-Kai; Hsu, Chang-Lung; Chiu, Ming-Hui; Takenobu, Taishi; Li, Henan; Wu, Chih-I; Chang, Wen-Hao; Wee, Andrew Thye Shen; Li, Lain-Jong; 電子物理學系; Department of Electrophysics
1-八月-2014Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast PhotodetectionChang, Yung-Huang; Zhang, Wenjing; Zhu, Yihan; Han, Yu; Pu, Jiang; Chang, Jan-Kai; Hsu, Wei-Ting; Huang, Jing-Kai; Hsu, Chang-Lung; Chiu, Ming-Hui; Takenobu, Taishi; Li, Henan; Wu, Chih-I; Chang, Wen-Hao; Wee, Andrew Thye Shen; Li, Lain-Jong; 電子物理學系; Department of Electrophysics
1-五月-2018Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3Xue, Fei; Zhang, Junwei; Hu, Weijin; Hsu, Wei-Ting; Han, Ali; Leung, Siu-Fung; Huang, Jing-Kai; Wan, Yi; Liu, Shuhai; Zhang, Junli; He, Jr-Hau; Chang, Wen-Hao; Wang, Zhong Lin; Zhang, Xixiang; Li, Lain-Jong; 電子物理學系; Department of Electrophysics
10-四月-2018Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayersHsu, Wei-Ting; Lu, Li-Syuan; Wu, Po-Hsun; Lee, Ming-Hao; Chen, Peng-Jen; Wu, Pei-Ying; Chou, Yi-Chia; Jeng, Horng-Tay; Li, Lain-Jong; Chu, Ming-Wen; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
1-三月-2015Optical detection of anisotropic g-factor and nuclear spin polarization in a single CdTe quantum wellYan, Li-Ping; Kurosawa, Masahiro; Hsu, Wei-Ting; Chang, Wen-Hao; Adachi, Satoru; 電子物理學系; Department of Electrophysics
1-十一月-2015Optically initialized robust valley-polarized holes in monolayer WSe2Hsu, Wei-Ting; Chen, Yen-Lun; Chen, Chiang-Hsiao; Liu, Pang-Shiuan; Hou, Tuo-Hung; Li, Lain-Jong; Chang, Wen-Hao; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
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