標題: | Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer |
作者: | Liao, Yu-An Hsu, Wei-Ting Huang, Shih-Han Chiu, Pei-Chin Chyi, Jen-Inn Chang, Wen-Hao 電子物理學系 Department of Electrophysics |
公開日期: | 29-四月-2013 |
摘要: | We investigate the optical properties of InAs quantum dots (QDs) capped with a thin AlxGa1-xAsSb layer. As evidenced from power-dependent and time-resolved photoluminescence (PL) measurements, the GaAsSb-capped QDs with type-II band alignment can be changed to type-I by adding Al into the GaAsSb capping layer. The evolution of band alignment with the Al content in the AlGaAsSb capping layer has also been confirmed by theoretical calculations based on 8-band k . p model. The PL thermal stability and the room temperature PL efficiency are also improved by AlGaAsSb capping. We demonstrate that using the quaternary AlGaAsSb can take the advantages of GaAsSb capping layer on the InAs QDs while retaining a type-I band alignment for applications in long-wavelength light emitters. (C) 2013 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4803013 http://hdl.handle.net/11536/21922 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4803013 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 102 |
Issue: | 17 |
結束頁: | |
顯示於類別: | 期刊論文 |