Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature

Abstract

Room-temperature 1.3-mu m electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-mu m emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range.