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公開日期標題作者
20064-GHz fully monolithic SiGe HBT QVCO using superharmonic coupling topologyTseng, S. C.; Meng, C. C.; Chang, Y. W.; Huang, G. W.; 電信工程研究所; Institute of Communications Engineering
20064-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCOMeng, C. C.; Tseng, S. C.; Chang, Y. W.; Su, J. Y.; Huang, G. W.; 電信工程研究所; Institute of Communications Engineering
1-四月-2007C-band fully integrated SiGe HBT superharmonic QVCOTseng, S. C.; Meng, C. C.; Chang, Y. W.; Huang, G. W.; 電信工程研究所; Institute of Communications Engineering
1-五月-2007High-gain high-isolation CMFB stacked-LO subharmonic Gilbert mixer using SiGe BiCMOS technologyWu, T. H.; Meng, C. C.; Huang, G. W.; 電信工程研究所; Institute of Communications Engineering
1-一月-2007Low-phase-noise transformer-based top-series QVCO using GaInP/GaAs HBT technologyMeng, C. C.; Tseng, S. C.; Chang, Y. W.; Su, J. Y.; Huang, G. W.; 電信工程研究所; Institute of Communications Engineering
2008Pad Characterization for CMOS Technology Using Time Domain ReflectometryChiu, C. S.; Chen, W. L.; Liao, K. H.; Chen, B. Y.; Teng, Y. M.; Huang, G. W.; Wu, L. K.; 電信工程研究所; Institute of Communications Engineering
2005RF characteristics of BJT devices with selectively or fully ion-implanted collectorMeng, C. C.; Su, J. Y.; Tsou, B. C.; Huang, G. W.; 電信工程研究所; Institute of Communications Engineering
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