標題: Pad Characterization for CMOS Technology Using Time Domain Reflectometry
作者: Chiu, C. S.
Chen, W. L.
Liao, K. H.
Chen, B. Y.
Teng, Y. M.
Huang, G. W.
Wu, L. K.
電信工程研究所
Institute of Communications Engineering
關鍵字: Time domain reflectometry (TDR);Capacitance;Impedance;Pad structure;On-wafer
公開日期: 2008
摘要: The pad structure of CMOS technology is characterized by way of time domain reflectometry measurement. Using the on-wafer TDR measurement system, the capacitance of the pad in the CMOS process was extracted and estimated. Measured and Simulated TDR data are also presented in this study. The capacitance is estimated when the curve is fitted by mathematical tool. This method is simple to use, and furthermore the results agree with data extracted from vector network analyzer.
URI: http://hdl.handle.net/11536/135055
ISBN: 978-1-4244-2866-3
期刊: 2008 IEEE INTERNATIONAL RF AND MICROWAVE CONFERENCE, PROCEEDINGS
起始頁: 214
結束頁: +
顯示於類別:會議論文