國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Huang, K. C.

顯示 1 到 8 筆資料，總共 8 筆

公開日期	標題	作者
1-四月-2008	GaN p-i-n photodetectors with an LT-GaN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.; 電子物理學系; Department of Electrophysics
1-二月-2007	GaN-based light-emitting diodes prepared on vicinal sapphire substrates	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics
1-六月-2018	Genetically closely related azole-resistant Candida tropicalis in environments can be a threat to healthcare	Zhou, Z. L.; Tsai, J. N.; Tseng, M. N.; Liu, H. L.; Lin, C. C.; Chen, K. T.; Huang, K. C.; Huang, C. H.; Chu, W. L.; Chen, Y. Z.; Chen, F. C.; Hsu, M. K.; Wang, S. C.; Peng, H. L.; Yang, Y. L.; Chen, Y. C.; Lo, H. J.; 交大名義發表; National Chiao Tung University
1-八月-2008	High light output intensity of titanium dioxide textured light-emitting diodes	Huang, K. C.; Lan, W. H.; Huang, K. F.; Lin, J. C.; Cheng, Y. C.; Lin, W. J.; Pan, S. M.; 電子物理學系; Department of Electrophysics
22-十月-2007	High responsivity of GaN p-i-n photodiode by using low-temperature interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.; 電子物理學系; Department of Electrophysics
1-一月-2008	Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics
2009	In0.11Ga0.89N-based p-i-n photodetector	Su, Y. K.; Lee, H. C.; Lin, J. C.; Huang, K. C.; Lin, W. J.; Li, T. C.; Chang, K. J.; 電子物理學系; Department of Electrophysics
1-七月-2008	Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Chen, W. R.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics

顯示 1 到 8 筆資料，總共 8 筆