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顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
1-四月-2012Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate DielectricWu, Chien-Hung; Chang, Kow-Ming; Huang, Sung-Hung; Deng, I-Chung; Wu, Chin-Jyi; Chiang, Wei-Han; Chang, Chia-Chiang; 電機工程學系; Department of Electrical and Computer Engineering
2011The Effect of Different Carrier Gases and Channel Thicknesses on the Characteristics of ZnO TFTs Prepared by Atmospheric Pressure Plasma JetChang, Kow-Ming; Huang, Sung-Hung; Chi, Chia-Wei; Wu, Chin-Jyi; Lin, Je-Wei; Chang, Chia-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jetWu, Chien-Hung; Chang, Kow-Ming; Huang, Sung-Hung; Deng, I-Chung; Chi, Chia-Wei; Wu, Chin-Jyi; Chang, Chia-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jetWu, Chien-Hung; Chang, Kow-Ming; Huang, Sung-Hung; Deng, I-Chung; Wu, Chin-Jyi; Chiang, Wei-Han; Lin, Je-Wei; Chang, Chia-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Performance improvement of pentacene-based organic thin-film transistor with HfO2 gate dielectrics treated by CF4 plasmaChang, Kow-Ming; Huang, Sung-Hung; Tseng, Yi-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2011Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jetChang, Kow-Ming; Huang, Sung-Hung; Wu, Chin-Jyi; Lin, Wei-Li; Chen, Wei-Chiang; Chi, Chia-Wei; Lin, Je-Wei; Chang, Chia-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012利用大氣常壓電漿輔助化學氣相沉積製備氧化鋅系透明電極與氧化鋅/銦鎵鋅氧薄膜電晶體應用之特性研究黃菘宏; Huang, Sung-Hung; 張國明; 吳建宏; Chang, Kow-Ming; Wu, Chien-Hung; 電子研究所
顯示 1 到 7 筆資料，總共 7 筆