標題: | Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectric |
作者: | Wu, Chien-Hung Chang, Kow-Ming Huang, Sung-Hung Deng, I-Chung Wu, Chin-Jyi Chiang, Wei-Han Chang, Chia-Chiang 電機工程學系 Department of Electrical and Computer Engineering |
關鍵字: | Al2O3;atmospheric pressure plasma jet (APPJ);indium-gallium-zinc oxide (IGZO);nonvacuum;plasma-enhanced atomic layer deposition (PE-ALD) |
公開日期: | 1-四月-2012 |
摘要: | This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V-T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm(2)/(V . s), and a large I-on/I-off ratio of 1 x 10(8). |
URI: | http://hdl.handle.net/11536/16084 |
ISSN: | 0741-3106 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 4 |
結束頁: | 552 |
顯示於類別: | 期刊論文 |