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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHuang, Sung-Hungen_US
dc.contributor.authorDeng, I-Chungen_US
dc.contributor.authorWu, Chin-Jyien_US
dc.contributor.authorChiang, Wei-Hanen_US
dc.contributor.authorChang, Chia-Chiangen_US
dc.date.accessioned2014-12-08T15:22:46Z-
dc.date.available2014-12-08T15:22:46Z-
dc.date.issued2012-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://hdl.handle.net/11536/16084-
dc.description.abstractThis letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V-T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm(2)/(V . s), and a large I-on/I-off ratio of 1 x 10(8).en_US
dc.language.isoen_USen_US
dc.subjectAl2O3en_US
dc.subjectatmospheric pressure plasma jet (APPJ)en_US
dc.subjectindium-gallium-zinc oxide (IGZO)en_US
dc.subjectnonvacuumen_US
dc.subjectplasma-enhanced atomic layer deposition (PE-ALD)en_US
dc.titleCharacteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue4en_US
dc.citation.epage552en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000302232900029-
dc.citation.woscount9-
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