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公開日期標題作者
1-二月-2013Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVDHuang, Wei-Ching; Chang, Edward-Yi; Wong, Yuen-Yee; Lin, Kung-Liang; Hsiao, Yu-Lin; Dee, Chang Fu; Majlis, Burhanuddin Yeop; 材料科學與工程學系; Department of Materials Science and Engineering
3-十二月-2007A Cu-based alloyed ohmic contact system on n-type GaAsChen, Ke-Shian; Chang, Edward Yi; Lin, Chia-Ching; Lee, Cheng-Shih; Huang, Wei-Ching; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2008Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD MethodLin, KungLiang; Chang, Edward-Yi; Li, Tingkai; Huang, Wei-Ching; Hsiao, Yu-Lin; Tweet, Douglas; Maa, Jer-shen; Hsu, Sheng-Teng; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2012Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si SubstratesHsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop; 材料科學與工程學系; 半導體材料與製程設備組; 照明與能源光電研究所; Department of Materials Science and Engineering; Degree Program of Semiconductor Material and Process Equipment; Institute of Lighting and Energy Photonics
1-八月-2012Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN TemplatesWong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
二月-2016The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD MethodHuang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-五月-2010Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor depositionLin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Luong, Tien-Tung; Wong, Yuen-Yee; Li, Tingkai; Tweet, Doug; Chiang, Chen-Hao; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-一月-2014The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2014Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistorsWong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2017Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT HeterostructureLumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
7-九月-2014Efficient inverted quasi-bilayer organic solar cells fabricated by using non-halogenated solvent processesChang, Jung-Hao; Wang, Hsiao-Fang; Lin, Wei-Chieh; Chiang, Kai-Ming; Chen, Kuan-Chen; Huang, Wei-Ching; Huang, Zheng-Yu; Meng, Hsin-Fei; Ho, Rong-Ming; Lin, Hao-Wu; 物理研究所; Institute of Physics
7-九月-2014Efficient inverted quasi-bilayer organic solar cells fabricated by using non-halogenated solvent processesChang, Jung-Hao; Wang, Hsiao-Fang; Lin, Wei-Chieh; Chiang, Kai-Ming; Chen, Kuan-Chen; Huang, Wei-Ching; Huang, Zheng-Yu; Meng, Hsin-Fei; Ho, Rong-Ming; Lin, Hao-Wu; 物理研究所; Institute of Physics
26-十一月-2007Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy methodLin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2014Highly efficient organic solar cells using a solution-processed active layer with a small molecule donor and pristine fullereneLin, Hao-Wu; Chang, Jung-Hao; Huang, Wei-Ching; Lin, Yu-Ting; Lin, Li-Yen; Lin, Francis; Wong, Ken-Tsung; Wang, Hsiao-Fang; Ho, Rong-Ming; Meng, Hsin-Fei; 物理研究所; Institute of Physics
1-一月-2009InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate DielectricChang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2015Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistorsHuang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVDLumbantoruan, Franky; Wong, Yuan-Yee; Wu, Yue-Han; Huang, Wei-Ching; Shrestra, Niraj Man; Luong, Tung Tien; Tran Binh Tinh; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
四月-2016Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperaturesHuang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
2008MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN bufferLin, Kung-Liang; Chang, Edward-Yi; Huang, Jui-Chien; Huang, Wei-Ching; Hsiao, Yu-Lin; Chiang, Chen-Hao; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2012The Parasitic Reaction During the MOCVD Growth of AlInN MaterialHuang, Wei-Ching; Wong, Yuen-Yee; Liu, Kusan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
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