標題: | Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates |
作者: | Wong, Yuen-Yee Huang, Wei-Ching Trinh, Hai-Dang Yang, Tsung-Hsi Chang, Jet-Rung Chen, Micheal Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | AlGaN/GaN;nitridation;regrowth interfaces;molecular beam epitaxy |
公開日期: | 1-Aug-2012 |
摘要: | AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation. |
URI: | http://hdl.handle.net/11536/16424 |
ISSN: | 0361-5235 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 41 |
Issue: | 8 |
結束頁: | 2139 |
Appears in Collections: | Articles |
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