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公開日期標題作者
2015Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge RoughnessChen, Chieh-Yang; Huang, Wen-Tsung; Li, Yiming; 資訊工程學系; Department of Computer Science
11-三月-2015Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopantsHuang, Wen-Tsung; Li, Yiming; 電機工程學系; 電信工程研究所; Department of Electrical and Computer Engineering; Institute of Communications Engineering
2013Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS DevicesChen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-2014The Impact of Fin/Sidewall/Gate Line Edge Roughness on Trapezoidal Bulk FinFET DevicesHuang, Wen-Tsung; Li, Yiming; 交大名義發表; 傳播研究所; 電機資訊學士班; National Chiao Tung University; Institute of Communication Studies; Undergraduate Honors Program of Electrical Engineering and Computer Science
1-九月-2013The intrinsic parameter fluctuation on high-kappa/metal gate bulk FinFET devicesLi, Yiming; Su, Hsin-Wen; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; 資訊工程學系; Department of Computer Science
1-九月-2013Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devicesChen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan; 資訊工程學系; Department of Computer Science
2014On Characteristic Fluctuation of Nonideal Bulk FinFET DevicesLi, Yiming; Huang, Wen-Tsung; 交大名義發表; 傳播研究所; 電機學院; National Chiao Tung University; Institute of Communication Studies; College of Electrical and Computer Engineering
1-一月-2013On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation EffectChen, Chieh-Yang; Li, Yiming; Chen, Yu-Yu; Chang, Han-Tung; Hsu, Sheng-Chia; Huang, Wen-Tsung; Yang, Chin-Min; Chen, Li-Wen; 資訊工程學系; Department of Computer Science
7-十一月-2009Photodissociation cross sections of ClOOCl at 248.4 and 266 nmLien, Chien-Yu; Lin, Wei-Yen; Chen, Hsueh-Ying; Huang, Wen-Tsung; Jin, Bing; Chen, I-Cheng; Lin, Jim J.; 應用化學系; Department of Applied Chemistry
2011Photodissociation dynamics of ClOOCl at 248.4 and 308.4 nmHuang, Wen-Tsung; Chen, Andrew F.; Chen, I-Cheng; Tsai, Chen-Hsun; Lin, Jim Jr-Min; 應用化學系; Department of Applied Chemistry
4-十一月-2011Photolysis Cross-Section of Ozone DimerChen, I-Cheng; Chen, Andrew F.; Huang, Wen-Tsung; Takahashi, Kaito; Lin, Jim J.; 應用化學系; Department of Applied Chemistry
1-一月-2013Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETsChen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming; 資訊工程學系; Department of Computer Science
1-一月-2015Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFETLi, Yiming; Huang, Wen-Tsung; Chen, Chieh-Yang; Chen, Yu-Yu; 資訊工程學系; Department of Computer Science
2014具梯形通道塊材鰭式場效應電晶體元件及其電路特性擾動之研究黃文聰; Huang, Wen-Tsung; 李義明; Li, Yiming; 電信工程研究所
顯示 1 到 14 筆資料，總共 14 筆