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公開日期標題作者
1-一月-2020Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching DeviceSu, Po-Cheng; Jiang, Cheng-Min; Chen, Yu-Jia; Wang, Chih-Chieh; Li, Kai-Shin; Lin, Chao-Cheng; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-七月-2017Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal methodLiu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
一月-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
一月-2017Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash MemoryLiu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2018Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching MemorySu, Po-Cheng; Jiang, Cheng-Min; Wang, Chih-Wei; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆