標題: Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory
作者: Su, Po-Cheng
Jiang, Cheng-Min
Wang, Chih-Wei
Wang, Tahui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive memory;read-disturb;analytical model
公開日期: 1-十一月-2018
摘要: We characterize SET-state current degradation induced by read operations in a tungsten oxide resistive memory cell. The current degradation exhibits a two-stage evolution. In the second stage, the current decline follows inverse power-law dependence on cumulative read-disturb time. We present an analytical model to derive the inverse power law. Our model includes oxygen ion activation, mobile oxygen ion hopping, and the reduction of oxygen vacancy density by re-oxidation. Voltage and temperature effects on read-disturb-induced degradation are characterized for comparison with the model. Our results show that the power factor in the inverse power law has exponential dependence on a read voltage.
URI: http://dx.doi.org/10.1109/LED.2018.2868472
http://hdl.handle.net/11536/148373
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2868472
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 39
起始頁: 1648
結束頁: 1651
顯示於類別:期刊論文