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公開日期標題作者
1-九月-2006HfSiON n-MOSFETs using low-work function HfSi chi gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 奈米科技中心; Center for Nanoscience and Technology
1-四月-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2007High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETsHung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, Shih C.; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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