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公開日期標題作者
1-二月-1996Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etchingKang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1997Charging damages to gate oxides in a helicon O-2 plasmaLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1997Charging damages to gate oxides in a helicon O-2 plasmaLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2004Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistorKang, TK; Su, KC; Chang, YJ; Chen, MJ; Yeh, SH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1998Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnectsLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2000Forward gated-diode measurement of filled traps in high-field stressed thin oxidesChen, MJ; Kang, TK; Huang, HT; Liu, CH; Chang, YJ; Fu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2001Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdownChen, MJ; Kang, TK; Lee, YH; Liu, CH; Chang, YJ; Fu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etchingCheng, HC; Kang, TK; Ku, TK; Dai, BT; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1998A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasmaCheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2001Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanismKang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Optimization of back side cleaning process to eliminate copper contaminationChou, WY; Tsui, BY; Kuo, CW; Kang, TK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-七月-2000Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxidesChen, MJ; Kang, TK; Liu, CH; Chang, YJ; Fu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Stability investigation of single-wafer process by using a spin etcherKang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 13 筆資料，總共 13 筆