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公開日期標題作者
2015The Demonstration of Low-cost and Logic Process Fully-Compatible OTP Memory on Advanced HKMG CMOS with a Newly found Dielectric Fuse BreakdownHsieh, E. R.; Huang, Z. H.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014The Experimental Demonstration of the BTI-Induced Breakdown Path in 28nm High-k Metal Gate Technology CMOS DevicesHsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A New Variation Plot to Examine the Interfacial-dipole Induced Work-function Variation in Advanced High-k Metal-gate CMOS DevicesHsieh, E. R.; Wang, Y. D.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Hsu, S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014The Observation of BTI-induced RTN Traps in Inversion and Accumulation Modes on HfO2 High-k Metal Gate 28nm CMOS DevicesWu, P. C.; Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015The RTN Measurement Technique on Leakage Path Finding in Advanced High-k Metal Gate CMOS DevicesHsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆