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公開日期標題作者
1-十二月-2003High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectricsDing, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 4 筆資料，總共 4 筆