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24-十月-2011Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxyYu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
6-十二月-2010Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
6-十二月-2010Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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