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公開日期標題作者
28-六月-19932-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; TSANG, JS; CHEN, HR; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
4-八月-19942-COLOR QUANTUM-WELL INFRARED PHOTODETECTOR WITH PEAK SENSITIVITIES AT 3.9 MU-M AND 8.1 MU-MTSAI, KL; LEE, CP; TSANG, JS; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-19952-DIMENSIONAL BI-PERIODIC GRATING-COUPLED ONE-COLOR AND 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; TSANG, JS; CHEN, HR; CHANG, KH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-19902-DIMENSIONAL SIMULATION OF ORIENTATION EFFECTS IN SELF-ALIGNED GAAS-MESFETSLO, SH; LEE, CP; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-四月-19912-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETSLO, SH; LEE, CP; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-九月-1995ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFFFAN, JC; LEE, CP; HWANG, JA; HWANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1995ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFFFAN, JC; LEE, CP; HWANG, JA; HWANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1991ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHODLIU, DG; CHIN, TC; LEE, CP; HWANG, HL; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1994ANALYSIS OF SURFACE-STATE EFFECT ON GATE LAG PHENOMENA IN GAAS-MESFETSLO, SH; LEE, CP; 電控工程研究所; Institute of Electrical and Control Engineering
2-五月-1994ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORSTSAI, KL; LEE, CP; CHANG, KH; LIU, DC; CHEN, HR; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1990BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXYLIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-四月-1994BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELLCHANG, YH; YEH, JJ; SHEU, YM; WANG, CC; CHEN, TC; CHANG, KH; LEE, CP; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1991CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORSWU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1990COMPARISON OF AU/NI/GE, AU/PD/GE, AND AU/PT/GE OHMIC CONTACTS TO N-TYPE GAASLIN, C; LEE, CP; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1994COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKERLIU, DC; LEE, CP; TSAI, KL; TSANG, JS; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1989COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAASLEE, CP; LIU, TH; WU, SC; 奈米中心; Nano Facility Center
1-七月-1995COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAASTSANG, JS; LEE, CP; FAN, JC; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-十月-1993CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-十月-1990DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXYLIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
25-五月-1992DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPYLIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
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