標題: | BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL |
作者: | CHANG, YH YEH, JJ SHEU, YM WANG, CC CHEN, TC CHANG, KH LEE, CP 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 1-Apr-1994 |
摘要: | Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states. |
URI: | http://hdl.handle.net/11536/2547 |
ISSN: | 0038-1101 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 37 |
Issue: | 4-6 |
起始頁: | 673 |
結束頁: | 675 |
Appears in Collections: | Articles |