Title: BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL
Authors: CHANG, YH
YEH, JJ
SHEU, YM
WANG, CC
CHEN, TC
CHANG, KH
LEE, CP
電控工程研究所
Institute of Electrical and Control Engineering
Issue Date: 1-Apr-1994
Abstract: Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states.
URI: http://hdl.handle.net/11536/2547
ISSN: 0038-1101
Journal: SOLID-STATE ELECTRONICS
Volume: 37
Issue: 4-6
Begin Page: 673
End Page: 675
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