| 標題: | BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL |
| 作者: | CHANG, YH YEH, JJ SHEU, YM WANG, CC CHEN, TC CHANG, KH LEE, CP 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 1-四月-1994 |
| 摘要: | Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states. |
| URI: | http://hdl.handle.net/11536/2547 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 37 |
| Issue: | 4-6 |
| 起始頁: | 673 |
| 結束頁: | 675 |
| 顯示於類別: | 期刊論文 |

