完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHANG, YH | en_US |
dc.contributor.author | YEH, JJ | en_US |
dc.contributor.author | SHEU, YM | en_US |
dc.contributor.author | WANG, CC | en_US |
dc.contributor.author | CHEN, TC | en_US |
dc.contributor.author | CHANG, KH | en_US |
dc.contributor.author | LEE, CP | en_US |
dc.date.accessioned | 2014-12-08T15:04:02Z | - |
dc.date.available | 2014-12-08T15:04:02Z | - |
dc.date.issued | 1994-04-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2547 | - |
dc.description.abstract | Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states. | en_US |
dc.language.iso | en_US | en_US |
dc.title | BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL | en_US |
dc.type | Article | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 37 | en_US |
dc.citation.issue | 4-6 | en_US |
dc.citation.spage | 673 | en_US |
dc.citation.epage | 675 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1994NE79600037 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |