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公開日期標題作者
21-八月-1995ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONTSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC; 電控工程研究所; Institute of Electrical and Control Engineering
1984ADAPTIVE LOAD BALANCING FOR PARALLEL QUEUES WITH TRAFFIC CONSTRAINTSYUM, TP; LIN, HC; 資訊工程學系; Department of Computer Science
13-九月-1993ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY; 機械工程學系; 電控工程研究所; Department of Mechanical Engineering; Institute of Electrical and Control Engineering
1-二月-1995CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCECHEN, TP; LEI, TF; LIN, HC; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1995CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMLIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD; 電子物理學系; Department of Electrophysics
15-十月-1994CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
7-二月-1994DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; 電控工程研究所; Institute of Electrical and Control Engineering
1-八月-1994EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1993EFFECTS OF ANNEALING CONDITIONS ON THE PHASE-STABILITY AND SUPERCONDUCTING PROPERTIES OF DC SPUTTERING TLBACACUO THIN-FILMSLIN, HC; LI, MH; LI, JJ; JANG, FI; FU, CM; JUANG, JY; UEN, TM; GOU, YS; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-九月-1994EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMSLIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY; 電控工程研究所; Institute of Electrical and Control Engineering
15-七月-1995EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1991ESTIMATING PIT-EXCAVATION VOLUME USING CUBIC SPLINE VOLUME FORMULACHEN, CS; LIN, HC; 土木工程學系; Department of Civil Engineering
1-六月-1995FABRICATION AND PROPERTIES OF DC-SPUTTERED TL-1223 SUPERCONDUCTING THIN-FILMSJUANG, JY; HORNG, JH; LIN, HC; WANG, SJ; FU, CM; WU, KH; UEN, TM; GOU, YS; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
26-九月-1994FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONLIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1995GLOBAL EXISTENCE, ASYMPTOTICS AND UNIQUENESS FOR THE REFLECTION KERNEL OF THE ANGULARLY SHIFTED TRANSPORT-EQUATIONJUANG, J; LIN, HC; NELSON, P; 應用數學系; Department of Applied Mathematics
2-十月-1995GROWTH AND PROPERTIES OF SUBMILLIMETER SINGLE GRAIN TL2BA2CA2CU3O10+X SUPERCONDUCTING THIN-FILMSLIN, HC; UEN, TM; LIU, CK; JUANG, JY; WU, KH; GOU, YS; 電子物理學系; 光電工程研究所; Department of Electrophysics; Institute of EO Enginerring
2-十月-1995GROWTH AND PROPERTIES OF SUBMILLIMETER SINGLE GRAIN TL2BA2CA2CU3O10+X SUPERCONDUCTING THIN-FILMSLIN, HC; UEN, TM; LIU, CK; JUANG, JY; WU, KH; GOU, YS; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
6-九月-1993GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY; 機械工程學系; 電控工程研究所; Department of Mechanical Engineering; Institute of Electrical and Control Engineering
1-一月-1994LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-十二月-1995LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTIONLEI, TF; CHEN, TP; LIN, HC; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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