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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
15-Nov-2003The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layerChiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2001Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device applicationCheng, YL; Wang, YL; Liu, CW; Wu, YL; Lo, KY; Liu, CP; Lan, JK; 材料科學與工程學系; Department of Materials Science and Engineering
22-Dec-2004Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor depositionCheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Wu, Y; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Jul-2003Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate filmsLan, JK; Wang, YL; Chao, CG; Lo, K; Cheng, YL; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-2005Equivalence of buddy networks with arbitrary number of stagesChen, CY; Hwang, FK; Lan, JK; 應用數學系; Department of Applied Mathematics
24-Feb-2006Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor depositionCheng, YL; Wang, YL; Lan, JK; Hwang, GJ; O'Neil, ML; Chen, CF; 材料科學與工程學系; Department of Materials Science and Engineering
15-Jan-2004Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallizationCheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2001Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic processLan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG; 材料科學與工程學系; Department of Materials Science and Engineering
1-Sep-2003Mechanisms of circular defects for shallow trench isolation oxide depositionLan, JK; Wang, YL; Liu, CP; Chao, CG; Ay, CY; Liu, CW; Cheng, YL; 材料科學與工程學系; Department of Materials Science and Engineering
30-Jan-2004Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant materialCheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
30-Jan-2004Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite linerLan, JK; Wang, YL; Liu, CP; Lee, WH; Ay, C; Cheng, YL; Chang, SC; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2004Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric applicationCheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-2000Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectricLan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS; 交大名義發表; National Chiao Tung University
1-Oct-2001X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin filmsLee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG; 交大名義發表; National Chiao Tung University
Showing results 1 to 14 of 14