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公開日期標題作者
8-九月-2005[ADJUSTABLE COLLIMATOR AND SPUTTERING APPARATUS WITH THE SAME]Lee, Cheng-Shih; Chang, Edward Yi
1-二月-2009Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTsChen, Ke-Shian; Chang, Edward Yi; Lin, Chia-Ching; Lee, Cheng-Shih; 材料科學與工程學系; Department of Materials Science and Engineering
12-七月-2007Copper metalized ohmic contact electrode of compound deviceLee, Cheng-Shih; Chang, Edward Yi; Chen, Ke-Shian
1-八月-2006Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applicationsLee, Cheng-Shih; Lien, Yi-Chung; Chang, Edward Yi; Chang, Huang-Choung; Chen, Szu-Houng; Lee, Ching-Ting; Chu, Li-Hsin; Chang, Shang-Wen; Hsieh, Yen-Chang; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
3-十二月-2007A Cu-based alloyed ohmic contact system on n-type GaAsChen, Ke-Shian; Chang, Edward Yi; Lin, Chia-Ching; Lee, Cheng-Shih; Huang, Wei-Ching; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
28-十二月-2006Cu-metalized compound semiconductor deviceChang, Edward Yi; Chang, Shang-Wen; Lee, Cheng-Shih
22-二月-2007INTERCONNECT OF GROUP III- V SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR MAKING THE SAMELee, Cheng-Shih; Chang, Edward Yi; Chang, Huang-Choung
21-四月-2005Method of fabricating copper metallization on backside of gallium arsenide devicesChang, Edward Yi; Lee, Cheng-Shih