Cu-metalized compound semiconductor device

標題:	Cu-metalized compound semiconductor device
作者:	Chang, Edward Yi Chang, Shang-Wen Lee, Cheng-Shih
公開日期:	28-十二月-2006
摘要:	The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
官方說明文件#:	H01L021/8238 H01L027/082
URI:	http://hdl.handle.net/11536/105677
專利國:	USA
專利號碼:	20060292785
顯示於類別：	專利資料

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