Cu-metalized compound semiconductor device

標題:	Cu-metalized compound semiconductor device
作者:	Chang Edward Yi Chang Shang-Wen Lee Cheng-Shih
公開日期:	2-九月-2008
摘要:	The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
官方說明文件#:	H01L023/48 H01L029/40 H01L021/02 H01L023/52 H01L029/66
URI:	http://hdl.handle.net/11536/104763
專利國:	USA
專利號碼:	07420227
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。