Cu-metalized compound semiconductor device

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang	en_US
dc.contributor.author	Edward Yi	en_US
dc.contributor.author	Chang	en_US
dc.contributor.author	Shang-Wen	en_US
dc.contributor.author	Lee	en_US
dc.contributor.author	Cheng-Shih	en_US
dc.date.accessioned	2014-12-16T06:14:29Z	-
dc.date.available	2014-12-16T06:14:29Z	-
dc.date.issued	2008-09-02	en_US
dc.identifier.govdoc	H01L023/48	zh_TW
dc.identifier.govdoc	H01L029/40	zh_TW
dc.identifier.govdoc	H01L021/02	zh_TW
dc.identifier.govdoc	H01L023/52	zh_TW
dc.identifier.govdoc	H01L029/66	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104763	-
dc.description.abstract	The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Cu-metalized compound semiconductor device	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	07420227	zh_TW
顯示於類別：	專利資料

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