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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
1-Oct-2002Breakdown modes and their evolution in ultrathin gate oxideLin, HC; Lee, DY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2004Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETsLee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damageLee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technologyLee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2001Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxideTsai, MY; Lin, HC; Lee, DY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETsLee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 6 of 6