標題: Breakdown modes and their evolution in ultrathin gate oxide
作者: Lin, HC
Lee, DY
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ultrathin gate oxide;metal-oxide-semiconductor (MOS);soft breakdown;hard breakdown
公開日期: 1-十月-2002
摘要: Post-breakdown current-voltage characteristics of metal-oxide-semiconductor (MOS) devices kith an ultrathin gate oxide layer have been carefully studied. Several breakdown modes were identified. Specifically, it was found that the typical soft-breakdown mode induced in an oxide lay er thinner than 3 nm is actually quite different from that in an oxide layer thicker than 3 nm. Based on these findings, we have also proposed a model to explain the evolution of different breakdown modes. The model takes into consideration the thermal runaway process at the breakdown moment, and is substantiated by a number of experimental findings. Impacts of each breakdown mode on device switching behavior are also discussed.
URI: http://hdl.handle.net/11536/28474
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 10
起始頁: 5957
結束頁: 5963
顯示於類別:期刊論文


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