標題: | Breakdown modes and their evolution in ultrathin gate oxide |
作者: | Lin, HC Lee, DY Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | ultrathin gate oxide;metal-oxide-semiconductor (MOS);soft breakdown;hard breakdown |
公開日期: | 1-十月-2002 |
摘要: | Post-breakdown current-voltage characteristics of metal-oxide-semiconductor (MOS) devices kith an ultrathin gate oxide layer have been carefully studied. Several breakdown modes were identified. Specifically, it was found that the typical soft-breakdown mode induced in an oxide lay er thinner than 3 nm is actually quite different from that in an oxide layer thicker than 3 nm. Based on these findings, we have also proposed a model to explain the evolution of different breakdown modes. The model takes into consideration the thermal runaway process at the breakdown moment, and is substantiated by a number of experimental findings. Impacts of each breakdown mode on device switching behavior are also discussed. |
URI: | http://hdl.handle.net/11536/28474 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 41 |
Issue: | 10 |
起始頁: | 5957 |
結束頁: | 5963 |
顯示於類別: | 期刊論文 |