標題: Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs
作者: Tsai, CW
Chen, MC
Gu, SH
Wang, T
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: breakdown (BD) progression;carrier temperature;substrate bias;ultrathin oxide pMOS
公開日期: 1-四月-2003
摘要: Negative substrate bias-enhanced oxide breakdown (BD) progression in ultrathin oxide (1.4 nm) pMOS is observed. The enhanced progression is attributed to the increase of hole-stress current resulting from BD-induced, channel-carrier heating. The carrier temperature extracted from the spectral distribution of hot-carrier luminescence is around 1300 K. The substrate bias dependence of post-BD hole-tunneling current is confirmed from measurement and calculation. The observed phenomenon is particularly significant to ultrathin gate oxide reliability in floating substrate (SOI) and forward-biased substrate devices.
URI: http://dx.doi.org/10.1109/LED.2003.810890
http://hdl.handle.net/11536/28006
ISSN: 0741-3106
DOI: 10.1109/LED.2003.810890
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 4
起始頁: 269
結束頁: 271
顯示於類別:期刊論文


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