Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs

doi:10.1109/LED.2003.810890

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, CW	en_US
dc.contributor.author	Chen, MC	en_US
dc.contributor.author	Gu, SH	en_US
dc.contributor.author	Wang, T	en_US
dc.date.accessioned	2014-12-08T15:41:09Z	-
dc.date.available	2014-12-08T15:41:09Z	-
dc.date.issued	2003-04-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2003.810890	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28006	-
dc.description.abstract	Negative substrate bias-enhanced oxide breakdown (BD) progression in ultrathin oxide (1.4 nm) pMOS is observed. The enhanced progression is attributed to the increase of hole-stress current resulting from BD-induced, channel-carrier heating. The carrier temperature extracted from the spectral distribution of hot-carrier luminescence is around 1300 K. The substrate bias dependence of post-BD hole-tunneling current is confirmed from measurement and calculation. The observed phenomenon is particularly significant to ultrathin gate oxide reliability in floating substrate (SOI) and forward-biased substrate devices.	en_US
dc.language.iso	en_US	en_US
dc.subject	breakdown (BD) progression	en_US
dc.subject	carrier temperature	en_US
dc.subject	substrate bias	en_US
dc.subject	ultrathin oxide pMOS	en_US
dc.title	Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2003.810890	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	4	en_US
dc.citation.spage	269	en_US
dc.citation.epage	271	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000183670900022	-
dc.citation.woscount	4	-
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