Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs

標題:	Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs
作者:	Tsai, CW Chen, MC Gu, SH Wang, T 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	breakdown (BD) progression;carrier temperature;substrate bias;ultrathin oxide pMOS
公開日期:	1-四月-2003
摘要:	Negative substrate bias-enhanced oxide breakdown (BD) progression in ultrathin oxide (1.4 nm) pMOS is observed. The enhanced progression is attributed to the increase of hole-stress current resulting from BD-induced, channel-carrier heating. The carrier temperature extracted from the spectral distribution of hot-carrier luminescence is around 1300 K. The substrate bias dependence of post-BD hole-tunneling current is confirmed from measurement and calculation. The observed phenomenon is particularly significant to ultrathin gate oxide reliability in floating substrate (SOI) and forward-biased substrate devices.
URI:	http://dx.doi.org/10.1109/LED.2003.810890 http://hdl.handle.net/11536/28006
ISSN:	0741-3106
DOI:	10.1109/LED.2003.810890
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	24
Issue:	4
起始頁:	269
結束頁:	271
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。