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公開日期標題作者
1-一月-2013The Analysis of Nano-Patterned Sapphire Substrates-Induced Compressive Strain to Enhance Quantum-Confined Stark Effect of InGaN-Based Light-Emitting DiodesChen, Po-Hsun; Su, Vincent; You, Yao-Hong; Lee, Ming-Lun; Hsieh, Cheng-Ju; Kuan, Chieh-Hsiung; Chen, Hung-Ming; Yang, Han-Bo; Lin, Hung-Chou; Lin, Ray-Ming; Chu, Fu-Chuan; Su, Gu-Yi; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2012Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air GapsTu, Shang-Ju; Lee, Ming-Lun; Yeh, Yu-Hsiang; Huang, Feng-Wen; Chen, Po-Cheng; Lai, Wei-Chih; Chen, Chung-Wei; Chi, Gou Chung; Sheu, Jinn-Kong; 光電工程學系; Department of Photonics
3-十一月-2014Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDsYou, Yao-Hong; Su, Vin-Cent; Ho, Ti-En; Lin, Bo-Wen; Lee, Ming-Lun; Das, Atanu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming; 材料科學與工程學系; Department of Materials Science and Engineering
7-十一月-2011Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetectionHuang, Feng-Wen; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Lai, Wei-Chih; Tsai, Wen-Che; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
5-三月-2012Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaNYan, Liang-Jyi; Kuo, Cheng Huang; Sheu, Jinn-Kong; Lee, Ming-Lun; Tseng, Wei-Chun; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-四月-2012Optical properties of Mn in regrown GaN-based epitaxial layersHuang, Feng-Wen; Sheu, Jinn-Kong; Tu, Shang-Ju; Chen, Po-Cheng; Yeh, Yu-Hsiang; Lee, Ming-Lun; Lai, Wei-Chih; Tsai, Wen-Che; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
顯示 1 到 6 筆資料，總共 6 筆