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公開日期標題作者
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
1-十一月-2001A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperatureLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-一月-1997Deposition of polycrystalline beta-SiC films on Si substrates at room temperatureCheng, KL; Cheng, HC; Lee, WH; Lee, CP; Liu, CC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Development of dielectric composite with X7R characteristicLee, WH; Ou, KH; Tsai, TL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2004Effect of glass additions on the sintering behaviors and electrical microwave properties of BaO-Nd2O3-Sm2O3-TiO2 ceramicsChang, LC; Chiou, BS; Lee, WH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2000Effects of A/B cation ratio on the microstructure and lifetime of (Ba1-xCax)(z)(Ti0.99-y ZryMn0.01)O-3 (BCTZM) sintered in reducing atmosphereLee, WH; Tseng, TY; Hennings, D; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Effects of calcination temperature and A/B ratio on the dielectric properties of (Ba,Ca)(Ti,Zr,Mn)O-3 for multilayer ceramic capacitors with nickel electrodesLee, WH; Tseng, TY; Hennings, DFK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2001Effects of ceramic processing parameters on the microstructure and dielectric properties of (Ba1-xCax)(Ti0.99-y, ZryMn0.01)O-3 sintered in a reducing atmosphereLee, WH; Tseng, TY; Hennings, D; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-二月-2002Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees CLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998The effects of isoelectronic in-doping in GaN films grown by MOCVDShu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
2000The electronic structure and optical properties of phosphorus implanted GaN filmsShu, CK; Lee, WH; Huang, HY; Chuang, CH; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2000Gallium K-edge EXAFS study of GaN : Mg filmsPan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-一月-2001Gallium K-edge x-ray absorption study on Mg-doped GaNPan, YC; Wang, SF; Lee, WH; Lee, MC; Chen, WK; Chen, WH; Jang, LY; Lee, JF; Chiang, CI; Chang, H; Wu, KT; Lin, DS; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
1-三月-2003Growth temperature reduction for isoelectronic As-doped GaNLee, WH; Huang, HY; Chen, WC; Lee, CF; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-二月-1998High precision, low cost mask for deep x-ray lithographyShew, BY; Cheng, Y; Shih, WP; Lu, M; Lee, WH; 交大名義發表; National Chiao Tung University
1-二月-1998High precision, low cost mask for deep x-ray lithographyShew, BY; Cheng, Y; Shih, WP; Lu, M; Lee, WH; 交大名義發表; National Chiao Tung University
1-九月-1999A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaNOu, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK; 電子物理學系; Department of Electrophysics
1-二月-1999Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxyPan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
30-十月-2000Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor depositionHuang, HY; Lin, WC; Lee, WH; Shu, CK; Liao, KC; Chen, WK; Lee, MC; Chen, WH; Lee, YY; 電子物理學系; Department of Electrophysics
1997Low temperature deposited highly-conductive N-type SiC thin filmsCheng, KL; Cheng, HC; Lee, WH; Lee, C; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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