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Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)
20-Dec-2010Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layerChang, S. P.; Wang, C. H.; Chiu, C. H.; Li, J. C.; Lu, Y. S.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
15-Sep-2010Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wellsLi, J. C.; Lu, T. C.; Huang, H. M.; Chan, W. W.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
15-Sep-2010Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wellsLi, J. C.; Lu, T. C.; Huang, H. M.; Chan, W. W.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
1-Nov-2010Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wellsWang, C. H.; Chang, S. P.; Chang, W. T.; Li, J. C.; Lu, Y. S.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2011Efficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layerWang, C. H.; Chang, S. P.; Chang, W. T.; Li, J. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
2011Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum WellsWang, C. H.; Chang, W. T.; Chang, S. P.; Li, J. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
1-Mar-2010Growth and characterization of a-plane Al(x)Ga(1-x)N alloys by metalorganic chemical vapor depositionHuang, H. M.; Ling, S. C.; Chen, J. R.; Ko, T. S.; Li, J. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
1-Mar-2010Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor depositionHuang, H. M.; Ling, S. C.; Chen, J. R.; Ko, T. S.; Li, J. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 照明與能源光電研究所; 光電工程學系; 光電工程研究所; Institute of Lighting and Energy Photonics; Department of Photonics; Institute of EO Enginerring
27-Dec-2010Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layerWang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
24-Oct-2011Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriersWang, C. H.; Chang, S. P.; Ku, P. H.; Li, J. C.; Lan, Y. P.; Lin, C. C.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; Chang, C. Y.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2011Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regionsWang, C. H.; Lin, D. W.; Chiu, C. H.; Chang, S. P.; Li, Z. Y.; Li, J. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
15-Jan-2011Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence methodWang, C. H.; Ke, C. C.; Chiu, C. H.; Li, J. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
Showing results 1 to 12 of 12