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公開日期標題作者
9-三月-2016Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect TransistorsZou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C.; Liao, Lei; 材料科學與工程學系; Department of Materials Science and Engineering
2-二月-2015The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistorsXu, Lei; Huang, Chun-Wei; Abliz, Ablat; Hua, Yang; Liao, Lei; Wu, Wen-Wei; Xiao, Xiangheng; Jiang, Changzhong; Liu, Wei; Li, Jinchai; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2018Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation LayersAbliz, Ablat; Wan, Da; Chen, Jui-Yuan; Xu, Lei; He, Jiawei; Yang, Yanbing; Duan, Haiming; Liu, Chuansheng; Jiang, Changzhong; Chen, Huipeng; Guo, Tailiang; Liao, Lei; 材料科學與工程學系; Department of Materials Science and Engineering
5-十月-2016High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling LayerWang, Jingli; Yao, Qian; Huang, Chun-Wei; Zou, Xuming; Liao, Lei; Chen, Shanshan; Fan, Zhiyong; Zhang, Kai; Wu, Wei; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; 材料科學與工程學系; Department of Materials Science and Engineering
4-十一月-2019High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layerWang, Yudan; Wu, Facai; Liu, Xingqiang; Lin, Jun; Chen, Jui-Yuan; Wu, Wen-Wei; Wei, Jingsong; Liu, Yuan; Liu, Qi; Liao, Lei; 材料科學與工程學系; Department of Materials Science and Engineering
24-九月-2014Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect TransistorsZou, Xuming; Wang, Jingli; Chiu, Chung-Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai; Ho, Johnny C.; Liao, Lei; 交大名義發表; 材料科學與工程學系; National Chiao Tung University; Department of Materials Science and Engineering
1-四月-2019Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access MemoryWu, Facai; Si, Shuyao; Cao, Peng; Wei, Wei; Zhao, Xiaolong; Shi, Tuo; Zhang, Xumeng; Ma, Jianwei; Cao, Rongrong; Liao, Lei; Tseng, Tseung-Yuen; Liu, Qi; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2015Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transistors Using Thermal Oxidized Y2O3 InterlayerLiao, Chongnan; Zou, Xuming; Huang, Chun-Wei; Wang, Jingli; Zhang, Kai; Kong, Yuechan; Chen, Tangsheng; Wu, Wen-Wei; Xiao, Xiangheng; Jiang, Changzhong; Liao, Lei; 材料科學與工程學系; Department of Materials Science and Engineering
6-六月-2017Possible absence of critical thickness and size effect in ultrathin perovskite ferroelectric filmsGao, Peng; Zhang, Zhangyuan; Li, Mingqiang; Ishikawa, Ryo; Feng, Bin; Liu, Heng-Jui; Huang, Yen-Lin; Shibata, Naoya; Ma, Xiumei; Chen, Shulin; Zhang, Jingmin; Liu, Kaihui; Wang, En-Ge; Yu, Dapeng; Liao, Lei; Chu, Ying-Hao; Ikuhara, Yuichi; 材料科學與工程學系; Department of Materials Science and Engineering
30-三月-2016Rational Design of ZnO:H/ZnO Bilayer Structure for High Performance Thin-Film TransistorsAbliz, Ablat; Huang, Chun-Wei; Wang, Jingli; Xu, Lei; Liao, Lei; Xiao, Xiangheng; Wu, Wen-Wei; Fan, Zhiyong; Jiang, Changzhong; Li, Jinchai; Guo, Shishang; Liu, Chuansheng; Guo, Tailiang; 材料科學與工程學系; Department of Materials Science and Engineering
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