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公開日期標題作者
1-四月-1999Deuterium effect on stress-induced leakage currentLin, BC; Cheng, YC; Chin, A; Wang, T; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1998The effect of native oxide on thin gate oxide integrityChin, A; Lin, BC; Chen, WJ; Lin, YB; Thai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrateChin, A; Lin, HY; Lin, BC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrateChin, A; Lin, HY; Lin, BC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
6-五月-1996High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wellsChin, A; Lin, BC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
9-九月-1996High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees CChin, A; Lin, BC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-九月-1996High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees CChin, A; Lin, BC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1999The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorptionLai, JM; Chieng, WH; Lin, BC; Chin, A; Tsai, C; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1998Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interfaceCheng, YC; Chen, WJ; Lin, BC; Tsai, C; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growthChin, A; Lin, BC; Gu, GL; Hsieh, KY; Jou, MJ; Lee, BJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Optical and structural properties of spontaneously formed long-range compositional modulation in (111)A and (111)B AlGaAsChin, A; Lin, BC; Gu, GL; Hsieh, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-七月-1996Picosecond photoresponse of carriers in Si ion-implanted SiChin, A; Lee, KY; Lin, BC; Horng, S; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2005Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatmentLin, BC; Chang, KM; Lai, CH; Hsieh, KY; Yao, JM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2005Reoxidation behavior of high-nitrogen oxynitride films after O-2 and N2O treatmentLin, BC; Chang, KM; Lai, CH; Hsieh, KY; Yao, JM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2006Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2Lai, CH; Lin, BC; Chang, KM; Hsieh, KY; Lai, YL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Thin oxides with in situ native oxide removalChin, A; Chen, WJ; Chang, T; Kao, RH; Lin, BC; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Thin oxides with in situ native oxide removalChin, A; Chen, WJ; Chang, T; Kao, RH; Lin, BC; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995Ultra-thin oxide with atomically smooth interfacesChin, A; Chen, WJ; Kao, RH; Lin, BC; Chang, T; Tsai, C; Huang, JCM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-五月-1997Ultrathin N2O-oxide with atomically flat interfacesChin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997Ultrathin N2O-oxide with atomically flat interfacesChin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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