The effect of native oxide on thin gate oxide integrity

標題:	The effect of native oxide on thin gate oxide integrity
作者:	Chin, A Lin, BC Chen, WJ Lin, YB Thai, C 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十一月-1998
摘要:	We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HF-vapor treated and H-2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm(2) and a large charge injection of 7.0 x 10(4) C/cm(2). The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.
URI:	http://dx.doi.org/10.1109/55.728901 http://hdl.handle.net/11536/31785
ISSN:	0741-3106
DOI:	10.1109/55.728901
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	19
Issue:	11
起始頁:	426
結束頁:	428
顯示於類別：	期刊論文

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